Development of MOS Transistors for Radiation-Hardened Large Scale Integrated Circuits and Analysis of Radiation-Induced Degradation
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Journal of Nuclear Science and Technology
سال: 1994
ISSN: 0022-3131,1881-1248
DOI: 10.1080/18811248.1994.9735112